Shengchuang Bai

9/2011-7/2013, Master of Engineering in Optical Engineering, Department of Electronic Engineering, School of Information Sciene and Technology, Xiamen University

9/2013-7/2016, Doctor of Physics Electronics, Department of Electronic Engineering, School of Information Sciene and Technology, Xiamen University

Awards：

4/2013, China Construction bank scholarship

5/2013, Second prize of the outstanding paper award in School of Information Science and Technology in Xiamen University

5/2013, Grand prize of “Challenge Cup” student curricular academic science and technology works by race in Xiamen University

5/2013, Second prize of “Challenge Cup” student curricular academic science and technology works by race in Fujian province

10/2013, National second prize of “Challenge Cup” National Undergraduate curricular academic science and technology works by race

12/2015, Excellent student cadre in Xiamen University

Publications：

1. S. C. Bai, J. Dong, and X. Zhou, An efficient watt-class intracavity frequency doubled Cr,Nd:YAG/KTP miniature green laser, IEEE Photonics Technology Letters, 25(9): 848-850, 2013.

2. S. C. Bai and J. Dong, GTR-KTP enhanced stable intracavity frequency doubled Cr,Nd:YAG self-Q-switched green laser, Laser Physics, vol. 25, p. 025002, 2015.

3. J. Dong, S. C. Bai, S. H. Liu, K. I. Ueda, and A. A. Kaminskii, A high repetition rate passively Q-switched microchip laser for controllable transverse laser modes, Journal of Optics, 18(5), p. 055205, 2016.

4. J. Dong, Y. He, and S. C. Bai, High Order Hermit-Gaussian Mode Passively Q-Switched Nd:YVO4 Microchip Laser, Advanced Solid State Lasers Conference and Exhibition, Berlin, 4th-9th October 2015, Berlin, Germany.

5. M. M. Zhang, S. C. Bai and J. Dong, Advances in Ince-Gaussian Modes Laser, Laser & Optoelectronics Progress, 53, p. 020002, 2016.

6. J. Dong, Y. He, X. Zhou, and S. C. Bai, Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince-Gaussian modes for optical trapping, Quantum Electronics, 46(3): 218-222, 2016.